Member Bibliography/Bibliografía de Miembros

This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.

Found 96 results
Author Title Type [ Year(Asc)]
Filters: Author is Collazo, R.  [Clear All Filters]
2012
B. Raghothamachar, Dalmau, R., Moody, B., Craft, S., Schlesser, R., Xie, J. Q., Collazo, R., Dudley, M., and Sitar, Z., Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics, Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., and Sitar, Z., Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN, physica status solidi (b), 2012.
R. Collazo, Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., and others, On the origin of the 265 nm absorption band in AlN bulk crystals, Applied Physics Letters, vol. 100, p. 191914, 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., and Sitar, Z., Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates, physica status solidi (c), 2012.
T. Nagashima, Kubota, Y., Kinoshita, T., Kumagai, Y., Xie, J., Collazo, R., Murakami, H., Okamoto, H., Koukitu, A., and Sitar, Z., Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport, Applied Physics Express, vol. 5, p. 125501, 2012.
E. A. Paisley, Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., and Maria, J. P., Surfactant assisted growth of MgO films on GaN, Applied Physics Letters, vol. 101, pp. 092904–092904, 2012.
J. G. Railsback, Singh, A., Pearce, R. C., McKnight, T. E., Collazo, R., Sitar, Z., Yingling, Y. G., and Melechko, A. V., Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation, Advanced Materials, 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., and others, 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization, in CLEO: Science and Innovations, 2011.
R. Dalmau, Moody, B., Xie, J., Collazo, R., and Sitar, Z., Characterization of dislocation arrays in AlN single crystals grown by PVT, physica status solidi (a), 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., Fermi level effect on strain of Si-doped GaN, Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
R. Dalmau, Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., and others, Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates, Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., and Sitar, Z., Impact of gallium supersaturation on the growth of N-polar GaN, physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates, physica status solidi (c), 2011.
A. R. Acharya, Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., and Collazo, R., Observation of NH2 species on tilted InN (011- 1) facets, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 29, p. 041402, 2011.
A. R. Acharya, Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., and Collazo, R., Observation of NH2 species on tilted InN (0111) facets 041402, Journal of Vacuum Science and Technology-Section A, vol. 29, 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications, physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., and Goldhahn, R., Sharp bound and free exciton lines from homoepitaxial AlN, physica status solidi (a), 2011.
H. S. Craft, Rice, A. L., Collazo, R., Sitar, Z., and Maria, J. P., Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN, Applied Physics Letters, vol. 98, p. 082110, 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., and Sitar, Z., On the strain in n-type GaN, Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
J. Xie, Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., and Sitar, Z., Strain in Si doped GaN and the Fermi level effect, Applied Physics Letters, vol. 98, p. 202101, 2011.
E. A. Paisley, Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., Irving, D. L., and Maria, J. P., Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions, Nature Communications, vol. 2, p. 461, 2011.
R. Kirste, Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., Mita, S., Xie, J., Rice, A., Tweedie, J., and others, Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN, Journal of Applied Physics, vol. 110, pp. 093503–093503, 2011.

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