Member Bibliography/Bibliografía de Miembros

This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.

Found 19 results
Author Title Type [ Year(Asc)]
Filters: Author is Tweedie, J.  [Clear All Filters]
Submitted
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., “Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R. Dalmau*, B. Moody, R. Schlesser, S. Mita and J. Xie HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, NC 27560, USA”, Submitted.
2012
G. Callsen, Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., Nenstiel, C., Hoffmann, A., Hoffmann, M., Tweedie, J., and others, “Optical signature of Mg-doped GaN: Transfer processes”, Physical Review B, vol. 86, p. 075207, 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., and Sitar, Z., “Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates”, physica status solidi (c), 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., and others, “265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization”, in CLEO: Science and Innovations, 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., “Fermi level effect on strain of Si-doped GaN”, Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
M. Buegler, Gamage, S., Atalay, R., Wang, J., Senevirathna, M. K. I., Kirste, R., Xu, T., Jamil, M., Ferguson, I., Tweedie, J., and others, “Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD”, physica status solidi (c), 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., and Sitar, Z., “Impact of gallium supersaturation on the growth of N-polar GaN”, physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., “Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates”, physica status solidi (c), 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications”, physica status solidi (c), 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., and Sitar, Z., “On the strain in n-type GaN”, Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
J. Xie, Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., and Sitar, Z., “Strain in Si doped GaN and the Fermi level effect”, Applied Physics Letters, vol. 98, p. 202101, 2011.
R. Kirste, Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., Mita, S., Xie, J., Rice, A., Tweedie, J., and others, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN”, Journal of Applied Physics, vol. 110, pp. 093503–093503, 2011.
2010
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., “The effect of N-polar GaN domains as Ohmic contacts”, Applied Physics Letters, vol. 97, p. 123502, 2010.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity”, physica status solidi (a), vol. 207, pp. 45–48, 2010.
A. Rice, Collazo, R., Tweedie, J., Xie, J., Mita, S., and Sitar, Z., “Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0<= x<= 1) deposition by LP OMVPE”, Journal of Crystal Growth, vol. 312, pp. 1321–1324, 2010.
M. Buegler, Gamage, S., Atalay, R., Wang, J., Senevirathna, I., Kirste, R., Xu, T., Jamil, M., Ferguson, I., Tweedie, J., and others, “Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD”, Proceedings of SPIE- The International Society for Optical Engineering, vol. 7784, 2010.
A. Rice, Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., and Sitar, Z., “Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition”, Journal of Applied Physics, vol. 108, p. 043510, 2010.
J. Tweedie, Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., and Sitar, Z., “X-ray characterization of composition and relaxation of AlGaN (0≤ x≤ 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy”, Journal of Applied Physics, vol. 108, p. 043526, 2010.
2008
N. Dietz, Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., Mita, S., and Sitar, Z., “The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition”, Applied Physics Letters, vol. 92, p. 041911, 2008.