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On this page you can display your personal bibliography. To do this do a search of your own publications in PubMedGoogle Scholar, or your favorite literature search or management tool. Import all your publications at once using the "Import My Publications" button, or add them one by one by pressing "Add a publication." To import all publications at once, you must use have a BibTex, EndNote, RIS, MARC, XML file of your publications or a list of PubMed IDs.  

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Found 108 results
Author Title Type [ Year(Asc)]
Filters: Drupal User is ramoncnc
2012
B. Raghothamachar, Dalmau, R., Moody, B., Craft, S., Schlesser, R., Xie, J. Q., Collazo, R., Dudley, M., and Sitar, Z., Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics, Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., and Sitar, Z., Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN, physica status solidi (b), 2012.
G. Callsen, Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., Nenstiel, C., Hoffmann, A., Hoffmann, M., Tweedie, J., and others, Optical signature of Mg-doped GaN: Transfer processes, Physical Review B, vol. 86, p. 075207, 2012.
R. Collazo, Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., and others, On the origin of the 265 nm absorption band in AlN bulk crystals, Applied Physics Letters, vol. 100, p. 191914, 2012.
R. R. Collazo, Sitar, Z., and Dalmau, R., PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES. 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., and Sitar, Z., Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates, physica status solidi (c), 2012.
T. Nagashima, Kubota, Y., Kinoshita, T., Kumagai, Y., Xie, J., Collazo, R., Murakami, H., Okamoto, H., Koukitu, A., and Sitar, Z., Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport, Applied Physics Express, vol. 5, p. 125501, 2012.
E. A. Paisley, Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., and Maria, J. P., Surfactant assisted growth of MgO films on GaN, Applied Physics Letters, vol. 101, pp. 092904–092904, 2012.
J. G. Railsback, Singh, A., Pearce, R. C., McKnight, T. E., Collazo, R., Sitar, Z., Yingling, Y. G., and Melechko, A. V., Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation, Advanced Materials, 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., and others, 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization, in CLEO: Science and Innovations, 2011.
R. Dalmau, Moody, B., Xie, J., Collazo, R., and Sitar, Z., Characterization of dislocation arrays in AlN single crystals grown by PVT, physica status solidi (a), 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., Fermi level effect on strain of Si-doped GaN, Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
R. Dalmau, Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., and others, Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates, Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
M. Buegler, Gamage, S., Atalay, R., Wang, J., Senevirathna, M. K. I., Kirste, R., Xu, T., Jamil, M., Ferguson, I., Tweedie, J., and others, Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD, physica status solidi (c), 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., and Sitar, Z., Impact of gallium supersaturation on the growth of N-polar GaN, physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates, physica status solidi (c), 2011.
A. R. Acharya, Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., and Collazo, R., Observation of NH2 species on tilted InN (011- 1) facets, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 29, p. 041402, 2011.
A. R. Acharya, Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., and Collazo, R., Observation of NH2 species on tilted InN (0111) facets 041402, Journal of Vacuum Science and Technology-Section A, vol. 29, 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., Passivation of aluminum nitride substrates. Google Patents, 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES. Google Patents, 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES. 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications, physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., and Goldhahn, R., Sharp bound and free exciton lines from homoepitaxial AlN, physica status solidi (a), 2011.

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