Member Bibliography/Bibliografía de Miembros

Esta página presenta todas las publicaciones personales que los miembros de CienciaPR han subido a sus perfiles. También puedes ver todos los autores en esta colección de publicaciones o todas las palabras claves contenidas en la colección.

Found 96 results
Autor Título Tipo [ Año(Asc)]
Filters: Autor is Collazo, R.  [Clear All Filters]
Submitted
R. Collazo y Dietz, N., «The Group III-Nitride Material Class: from Preparation to Perspectives in Photoelectrocatalysis», Submitted.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R. Dalmau*, B. Moody, R. Schlesser, S. Mita and J. Xie HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, NC 27560, USA», Submitted.
2012
B. Raghothamachar, Dalmau, R., Moody, B., Craft, S., Schlesser, R., Xie, J. Q., Collazo, R., Dudley, M., y Sitar, Z., «Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics», Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., y Sitar, Z., «Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN», physica status solidi (b), 2012.
R. Collazo, Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., y others, «On the origin of the 265 nm absorption band in AlN bulk crystals», Applied Physics Letters, vol. 100, p. 191914, 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., y Sitar, Z., «Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates», physica status solidi (c), 2012.
T. Nagashima, Kubota, Y., Kinoshita, T., Kumagai, Y., Xie, J., Collazo, R., Murakami, H., Okamoto, H., Koukitu, A., y Sitar, Z., «Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport», Applied Physics Express, vol. 5, p. 125501, 2012.
E. A. Paisley, Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., y Maria, J. P., «Surfactant assisted growth of MgO films on GaN», Applied Physics Letters, vol. 101, pp. 092904–092904, 2012.
J. G. Railsback, Singh, A., Pearce, R. C., McKnight, T. E., Collazo, R., Sitar, Z., Yingling, Y. G., y Melechko, A. V., «Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation», Advanced Materials, 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., y others, «265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization», in CLEO: Science and Innovations, 2011.
R. Dalmau, Moody, B., Xie, J., Collazo, R., y Sitar, Z., «Characterization of dislocation arrays in AlN single crystals grown by PVT», physica status solidi (a), 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Fermi level effect on strain of Si-doped GaN», Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
R. Dalmau, Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., y others, «Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates», Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., y Sitar, Z., «Impact of gallium supersaturation on the growth of N-polar GaN», physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates», physica status solidi (c), 2011.
A. R. Acharya, Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., y Collazo, R., «Observation of NH2 species on tilted InN (011- 1) facets», Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 29, p. 041402, 2011.
A. R. Acharya, Buegler, M., Atalay, R., Dietz, N., Thoms, B. D., Tweedie, J. S., y Collazo, R., «Observation of NH2 species on tilted InN (0111) facets 041402», Journal of Vacuum Science and Technology-Section A, vol. 29, 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications», physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., y Goldhahn, R., «Sharp bound and free exciton lines from homoepitaxial AlN», physica status solidi (a), 2011.
H. S. Craft, Rice, A. L., Collazo, R., Sitar, Z., y Maria, J. P., «Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN», Applied Physics Letters, vol. 98, p. 082110, 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., y Sitar, Z., «On the strain in n-type GaN», Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
J. Xie, Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., y Sitar, Z., «Strain in Si doped GaN and the Fermi level effect», Applied Physics Letters, vol. 98, p. 202101, 2011.
E. A. Paisley, Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., Irving, D. L., y Maria, J. P., «Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions», Nature Communications, vol. 2, p. 461, 2011.
R. Kirste, Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., Mita, S., Xie, J., Rice, A., Tweedie, J., y others, «Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN», Journal of Applied Physics, vol. 110, pp. 093503–093503, 2011.
2010
M. D. Losego, Craft, H. S., Paisley, E. A., Mita, S., Collazo, R., Sitar, Z., y Maria, J. P., «Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux», Journal of Materials Research, vol. 25, pp. 670–679, 2010.

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