Member Bibliography/Bibliografía de Miembros

Esta página presenta todas las publicaciones personales que los miembros de CienciaPR han subido a sus perfiles. También puedes ver todos los autores en esta colección de publicaciones o todas las palabras claves contenidas en la colección.

Found 91 results
Autor Título Tipo [ Año(Asc)]
Filters: Autor is Sitar, Z.  [Clear All Filters]
Submitted
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R. Dalmau*, B. Moody, R. Schlesser, S. Mita and J. Xie HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, NC 27560, USA», Submitted.
2012
B. Raghothamachar, Dalmau, R., Moody, B., Craft, S., Schlesser, R., Xie, J. Q., Collazo, R., Dudley, M., y Sitar, Z., «Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics», Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., y Sitar, Z., «Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN», physica status solidi (b), 2012.
R. R. Collazo, Sitar, Z., y Dalmau, R., «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., y Sitar, Z., «Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates», physica status solidi (c), 2012.
T. Nagashima, Kubota, Y., Kinoshita, T., Kumagai, Y., Xie, J., Collazo, R., Murakami, H., Okamoto, H., Koukitu, A., y Sitar, Z., «Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport», Applied Physics Express, vol. 5, p. 125501, 2012.
E. A. Paisley, Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., y Maria, J. P., «Surfactant assisted growth of MgO films on GaN», Applied Physics Letters, vol. 101, pp. 092904–092904, 2012.
J. G. Railsback, Singh, A., Pearce, R. C., McKnight, T. E., Collazo, R., Sitar, Z., Yingling, Y. G., y Melechko, A. V., «Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation», Advanced Materials, 2012.
2011
R. Dalmau, Moody, B., Xie, J., Collazo, R., y Sitar, Z., «Characterization of dislocation arrays in AlN single crystals grown by PVT», physica status solidi (a), 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Fermi level effect on strain of Si-doped GaN», Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., y Sitar, Z., «Impact of gallium supersaturation on the growth of N-polar GaN», physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates», physica status solidi (c), 2011.
R. R. Collazo, Sitar, Z., y Dalmau, R., «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». Google Patents, 2011.
R. R. Collazo, Sitar, Z., y Dalmau, R., «Passivation of aluminum nitride substrates». Google Patents, 2011.
R. R. Collazo, Sitar, Z., y Dalmau, R., «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications», physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., y Goldhahn, R., «Sharp bound and free exciton lines from homoepitaxial AlN», physica status solidi (a), 2011.
H. S. Craft, Rice, A. L., Collazo, R., Sitar, Z., y Maria, J. P., «Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN», Applied Physics Letters, vol. 98, p. 082110, 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., y Sitar, Z., «On the strain in n-type GaN», Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
J. Xie, Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., y Sitar, Z., «Strain in Si doped GaN and the Fermi level effect», Applied Physics Letters, vol. 98, p. 202101, 2011.
E. A. Paisley, Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., Irving, D. L., y Maria, J. P., «Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions», Nature Communications, vol. 2, p. 461, 2011.
2010
R. Schlesser, Collazo, R. R., y Sitar, Z., «Controlled polarity group III-nitride films and methods of preparing such films». Google Patents, 2010.
R. Schlesser, Collazo, R. R., y Sitar, Z., «Controlled polarity group III-nitride films and methods of preparing such films». Google Patents, 2010.
M. D. Losego, Craft, H. S., Paisley, E. A., Mita, S., Collazo, R., Sitar, Z., y Maria, J. P., «Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux», Journal of Materials Research, vol. 25, pp. 670–679, 2010.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «The effect of N-polar GaN domains as Ohmic contacts», Applied Physics Letters, vol. 97, p. 123502, 2010.

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