Member Bibliography/Bibliografía de Miembros

Esta página presenta todas las publicaciones personales que los miembros de CienciaPR han subido a sus perfiles. También puedes ver todos los autores en esta colección de publicaciones o todas las palabras claves contenidas en la colección.

Found 19 results
Autor Título Tipo [ Año(Asc)]
Filters: Autor is Tweedie, J.  [Clear All Filters]
Submitted
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R. Dalmau*, B. Moody, R. Schlesser, S. Mita and J. Xie HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, NC 27560, USA», Submitted.
2012
G. Callsen, Wagner, M. R., Kure, T., Reparaz, J. S., Buegler, M., Brunnmeier, J., Nenstiel, C., Hoffmann, A., Hoffmann, M., Tweedie, J., y others, «Optical signature of Mg-doped GaN: Transfer processes», Physical Review B, vol. 86, p. 075207, 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., y Sitar, Z., «Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates», physica status solidi (c), 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., y others, «265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization», in CLEO: Science and Innovations, 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Fermi level effect on strain of Si-doped GaN», Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
M. Buegler, Gamage, S., Atalay, R., Wang, J., Senevirathna, M. K. I., Kirste, R., Xu, T., Jamil, M., Ferguson, I., Tweedie, J., y others, «Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD», physica status solidi (c), 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., y Sitar, Z., «Impact of gallium supersaturation on the growth of N-polar GaN», physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates», physica status solidi (c), 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications», physica status solidi (c), 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., y Sitar, Z., «On the strain in n-type GaN», Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
J. Xie, Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., y Sitar, Z., «Strain in Si doped GaN and the Fermi level effect», Applied Physics Letters, vol. 98, p. 202101, 2011.
R. Kirste, Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., Mita, S., Xie, J., Rice, A., Tweedie, J., y others, «Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN», Journal of Applied Physics, vol. 110, pp. 093503–093503, 2011.
2010
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «The effect of N-polar GaN domains as Ohmic contacts», Applied Physics Letters, vol. 97, p. 123502, 2010.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity», physica status solidi (a), vol. 207, pp. 45–48, 2010.
A. Rice, Collazo, R., Tweedie, J., Xie, J., Mita, S., y Sitar, Z., «Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0<= x<= 1) deposition by LP OMVPE», Journal of Crystal Growth, vol. 312, pp. 1321–1324, 2010.
M. Buegler, Gamage, S., Atalay, R., Wang, J., Senevirathna, I., Kirste, R., Xu, T., Jamil, M., Ferguson, I., Tweedie, J., y others, «Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD», Proceedings of SPIE- The International Society for Optical Engineering, vol. 7784, 2010.
A. Rice, Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., y Sitar, Z., «Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition», Journal of Applied Physics, vol. 108, p. 043510, 2010.
J. Tweedie, Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., y Sitar, Z., «X-ray characterization of composition and relaxation of AlGaN (0≤ x≤ 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy», Journal of Applied Physics, vol. 108, p. 043526, 2010.
2008
N. Dietz, Alevli, M., Atalay, R., Durkaya, G., Collazo, R., Tweedie, J., Mita, S., y Sitar, Z., «The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition», Applied Physics Letters, vol. 92, p. 041911, 2008.