Member Bibliography/Bibliografía de Miembros

This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.

Found 91 results
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O
R. Kirste, Wagner, M. R., Schulze, J. H., Strittmatter, A., Collazo, R., Sitar, Z., Alevli, M., Dietz, N., and Hoffmann, A., “Optical properties of InN grown on templates with controlled surface polarities”, physica status solidi (a), vol. 207, pp. 2351–2354, 2010.
P
M. D. Losego, Mita, S., Collazo, R., Sitar, Z., and Maria, J. P., “Papers from the 24th North American Conference on Molecular Beam Epitaxy-Oxides on Semiconductors-Epitaxial calcium oxide films deposited on gallium nitride surfaces”, Journal of Vacuum Science and Technology-Section B, vol. 25, pp. 1029–1032, 2007.
H. S. Craft, Collazo, R., Sitar, Z., and Maria, J. P., “Papers from the 33rd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Oxides and Complex Dielectrics-Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111)”, Journal of Vacuum Science and Technology-Section B, vol. 24, pp. 2105–2110, 2006.
R. R. Collazo, Sitar, Z., and Dalmau, R., “Passivation of aluminum nitride substrates”. Google Patents, 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. Google Patents, 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2012.
R. Collazo, Sitar, Z., Dalmau, R., and others, “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2010.
S. Mita, Collazo, R., Schlesser, R., and Sitar, Z., “Polarity control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates”, MRS Proceedings, vol. 831, 2004.
R. Collazo, Mita, S., Schlesser, R., and Sitar, Z., “Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy”, physica status solidi (c), vol. 2, pp. 2117–2120, 2005.
S. Mita, Collazo, R., Schlesser, R., and Sitar, Z., “Polarity Control of LP-MOVPE GaN using N2 the Carrier Gas”, MRS Proceedings, vol. 892, 2005.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications”, physica status solidi (c), 2011.
R
R. Collazo, Schlesser, R., and Sitar, Z., “Role of adsorbates in field emission from nanotubes”, Diamond and related materials, vol. 11, pp. 769–773, 2002.
R. Collazo, Liang, M., Schlesser, R., and Sitar, Z., “The Role of Adsorbates on the Field Emission Properties of Single-Walled Carbon Nanotubes”, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 706, pp. 119–124, 2001.
S
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., and Sitar, Z., “Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates”, physica status solidi (c), 2012.
P. Lu, Collazo, R., Dalmau, R. F., Durkaya, G., Dietz, N., Raghothamachar, B., Dudley, M., and Sitar, Z., “Seeded growth of AlN bulk crystals in< i> m-and< i> c-orientation”, Journal of Crystal Growth, vol. 312, pp. 58–63, 2009.
Z. G. Herro, Zhuang, D., Schlesser, R., Collazo, R., and Sitar, Z., “Seeded growth of AlN on N-and Al-polar< span>< img height=”, Journal of crystal growth, vol. 286, pp. 205–208, 2006.
H. Li, Chandrasekaran, H., Sunkara, M. K., Collazo, R., Sitar, Z., Stukowski, M., and Rajan, K., “Self-oriented Growth of GaN Films on Molten Gallium”, MRS Proceedings, vol. 831, 2004.
C. S. Chang, Chattopadhyay, S., Chen, L. C., Chen, K. H., Chen, C. W., Chen, Y. F., Collazo, R., and Sitar, Z., “Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Band-gap dependence of field emission from one-dimensional nanostructures grown on n-type and p-type silicon substrates”, Physical Review-Section B-Condensed Matter, vol. 68, pp. 125322–125322, 2003.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., and Goldhahn, R., “Sharp bound and free exciton lines from homoepitaxial AlN”, physica status solidi (a), 2011.
G. N. Yushin, Kvit, A. V., Collazo, R., and Sitar, Z., “SiC to SiC Wafer Bonding”, MRS Proceedings, vol. 742, 2002.
R. Collazo, Mita, S., Rice, A., Dalmau, R. F., and Sitar, Z., “Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping”, Applied Physics Letters, vol. 91, p. 212103, 2007.
H. S. Craft, Collazo, R., Losego, M. D., Mita, S., Sitar, Z., and Maria, J. P., “Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface”, Applied Physics Letters, vol. 92, p. 082907, 2008.
H. S. Craft, Rice, A. L., Collazo, R., Sitar, Z., and Maria, J. P., “Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN”, Applied Physics Letters, vol. 98, p. 082110, 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., and Sitar, Z., “On the strain in n-type GaN”, Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.

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