Member Bibliography/Bibliografía de Miembros
This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.
“265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization”, in CLEO: Science and Innovations, 2011.
“Characterization of dislocation arrays in AlN single crystals grown by PVT”, physica status solidi (a), 2011.
, “The effect of N-polar GaN domains as Ohmic contacts”, Applied Physics Letters, vol. 97, p. 123502, 2010.
, “Fermi level effect on strain of Si-doped GaN”, Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
, “Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates”, Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
“Impact of gallium supersaturation on the growth of N-polar GaN”, physica status solidi (c), 2011.
, “Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity”, physica status solidi (a), vol. 207, pp. 45–48, 2010.
, “Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0<= x<= 1) deposition by LP OMVPE”, Journal of Crystal Growth, vol. 312, pp. 1321–1324, 2010.
, “Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates”, physica status solidi (c), 2011.
, “Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN”, physica status solidi (b), 2012.
, “On the origin of the 265 nm absorption band in AlN bulk crystals”, Applied Physics Letters, vol. 100, p. 191914, 2012.
“Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications”, physica status solidi (c), 2011.
, “Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates”, physica status solidi (c), 2012.
, “Sharp bound and free exciton lines from homoepitaxial AlN”, physica status solidi (a), 2011.
, “On the strain in n-type GaN”, Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
, “Strain in Si doped GaN and the Fermi level effect”, Applied Physics Letters, vol. 98, p. 202101, 2011.
, “Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport”, Applied Physics Express, vol. 5, p. 125501, 2012.
, “Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition”, Journal of Applied Physics, vol. 108, p. 043510, 2010.
, “Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN”, Journal of Applied Physics, vol. 110, pp. 093503–093503, 2011.
“X-ray characterization of composition and relaxation of AlGaN (0≤ x≤ 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy”, Journal of Applied Physics, vol. 108, p. 043526, 2010.
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