Member Bibliography/Bibliografía de Miembros

This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.

Found 25 results
Author Title Type [ Year(Asc)]
Filters: Author is Dalmau, R.  [Clear All Filters]
2012
B. Raghothamachar, Dalmau, R., Moody, B., Craft, S., Schlesser, R., Xie, J. Q., Collazo, R., Dudley, M., and Sitar, Z., “Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics”, Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., and Sitar, Z., “Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN”, physica status solidi (b), 2012.
R. Collazo, Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., and others, “On the origin of the 265 nm absorption band in AlN bulk crystals”, Applied Physics Letters, vol. 100, p. 191914, 2012.
R. R. Collazo, Sitar, Z., and Dalmau, R., “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., and others, “265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization”, in CLEO: Science and Innovations, 2011.
R. Dalmau, Moody, B., Xie, J., Collazo, R., and Sitar, Z., “Characterization of dislocation arrays in AlN single crystals grown by PVT”, physica status solidi (a), 2011.
R. Dalmau, Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., and others, “Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates”, Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., and Sitar, Z., “Impact of gallium supersaturation on the growth of N-polar GaN”, physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., and Sitar, Z., “Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates”, physica status solidi (c), 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., “Passivation of aluminum nitride substrates”. Google Patents, 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2011.
R. R. Collazo, Sitar, Z., and Dalmau, R., “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. Google Patents, 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications”, physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., and Goldhahn, R., “Sharp bound and free exciton lines from homoepitaxial AlN”, physica status solidi (a), 2011.
2010
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity”, physica status solidi (a), vol. 207, pp. 45–48, 2010.
R. Collazo, Sitar, Z., Dalmau, R., and others, “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2010.
A. Rice, Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., and Sitar, Z., “Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition”, Journal of Applied Physics, vol. 108, p. 043510, 2010.
J. Tweedie, Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., and Sitar, Z., “X-ray characterization of composition and relaxation of AlGaN (0≤ x≤ 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy”, Journal of Applied Physics, vol. 108, p. 043526, 2010.
2008
R. Collazo, Mita, S., Rice, A., Dalmau, R., Wellenius, P., Muth, J., and Sitar, Z., “Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity”, physica status solidi (c), vol. 5, pp. 1977–1979, 2008.
2007
S. Mita, Collazo, R., Dalmau, R., and Sitar, Z., “Growth of highly resistive Ga-polar GaN by LP-MOVPE”, physica status solidi (c), vol. 4, pp. 2260–2263, 2007.
R. Collazo, Mita, S., Dalmau, R., and Sitar, Z., “Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE”, physica status solidi (c), vol. 4, pp. 2597–2600, 2007.
R. Dalmau, Collazo, R., Mita, S., and Sitar, Z., “X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution”, Journal of electronic materials, vol. 36, pp. 414–419, 2007.
2005
R. Schlesser, Dalmau, R., Zhuang, D., Collazo, R., and Sitar, Z., “Crucible materials for growth of aluminum nitride crystals”, Journal of crystal growth, vol. 281, pp. 75–80, 2005.
2004
D. W. Brenner, Schlesser, R., Sitar, Z., Dalmau, R., Collazo, R., and Li, Y., “Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport”, Surface science, vol. 560, pp. L202–L206, 2004.
1998
R. Collazo, Dalmau, R., and Martinez, A., “Hot Wall Epitaxy And Characterization Of Bismuth And Antimony Thin Films On Barium Fluoride Substrates”, in APS March Meeting Abstracts, 1998, vol. 1, p. 3010.