Member Bibliography/Bibliografía de Miembros

This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.

Found 23 results
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R. Collazo, Mita, S., Aleksov, A., Schlesser, R., and Sitar, Z., “Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers”, Journal of crystal growth, vol. 287, pp. 586–590, 2006.
R. Collazo, Schlesser, R., and Sitar, Z., “Two field-emission states of single-walled carbon nanotubes”, Applied Physics Letters, vol. 78, p. 2058, 2001.
R. Collazo, Schlesser, R., and Sitar, Z., “Role of adsorbates in field emission from nanotubes”, Diamond and related materials, vol. 11, pp. 769–773, 2002.
R. Collazo, Schlesser, R., Roskowski, A., Davis, R. F., and Sitar, Z., “Hot electron transport in AlN”, Journal of Applied Physics, vol. 88, p. 5865, 2000.
R. Collazo, Mita, S., Rice, A., Dalmau, R. F., and Sitar, Z., “Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping”, Applied Physics Letters, vol. 91, p. 212103, 2007.
R. Collazo, Mita, S., Schlesser, R., and Sitar, Z., “Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy”, physica status solidi (c), vol. 2, pp. 2117–2120, 2005.
R. Collazo, Schlesser, R., and Sitar, Z., “Experimental observation of electron velocity overshoot in AlN”, Applied physics letters, vol. 81, p. 5189, 2002.
R. Collazo, Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., and Sitar, Z., “Electron energy distribution during high-field transport in AlN”, Journal of applied physics, vol. 93, p. 2765, 2003.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity”, physica status solidi (a), vol. 207, pp. 45–48, 2010.
R. Collazo, Mita, S., Dalmau, R., and Sitar, Z., “Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE”, physica status solidi (c), vol. 4, pp. 2597–2600, 2007.
R. Collazo, Schlesser, R., and Sitar, Z., “Field emission from carbon nanotubes”, New Diamond Frontier Carbon Technol, vol. 13, pp. 297–306, 2003.
R. Collazo, Schlesser, R., Roskowski, A., Davis, R. F., and Sitar, Z., “Observations of Electron Velocity Overshoot During High-Field Transport in AlN”, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 743, pp. 591–596, 2003.
R. Collazo, Mita, S., Rice, A., Dalmau, R., Wellenius, P., Muth, J., and Sitar, Z., “Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity”, physica status solidi (c), vol. 5, pp. 1977–1979, 2008.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., and others, “265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization”, in CLEO: Science and Innovations, 2011.
R. Collazo, Dalmau, R., and Martinez, A., “Hot Wall Epitaxy And Characterization Of Bismuth And Antimony Thin Films On Barium Fluoride Substrates”, in APS March Meeting Abstracts, 1998, vol. 1, p. 3010.
R. Collazo, Schlesser, R., and Sitar, Z., “High Field Transport in AlN”, International Journal of High Speed Electronics and Systems, vol. 14, pp. 155–174, 2004.
R. Collazo, Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., and others, “On the origin of the 265 nm absorption band in AlN bulk crystals”, Applied Physics Letters, vol. 100, p. 191914, 2012.
R. Collazo, Schlesser, R., Roskowski, A., Davis, R. F., and Sitar, Z., “Electron transport in AlN under high electric fields”, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 693, pp. 437–442, 2002.
R. Collazo, Liang, M., Schlesser, R., and Sitar, Z., “The Role of Adsorbates on the Field Emission Properties of Single-Walled Carbon Nanotubes”, MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 706, pp. 119–124, 2001.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., and Sitar, Z., “Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications”, physica status solidi (c), 2011.
R. Collazo and Dietz, N., “The Group III-Nitride Material Class: from Preparation to Perspectives in Photoelectrocatalysis”, Submitted.
R. Collazo, Sitar, Z., Schlesser, R., and others, “CONTROLLED POLARITY GROUP III-NITRIDE FILMS AND METHODS OF PREPARING SUCH FILMS”. 2006.
R. Collazo, Sitar, Z., Dalmau, R., and others, “PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES”. 2010.