Member Bibliography/Bibliografía de Miembros
This page collects all the personal publications that CienciaPR members have uploaded to their profiles. You can also see all of the authors collected in these publications or all the keywords contained in these publications.
] , “Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study”. DTIC Document, 2007.
, “Growth of highly resistive Ga-polar GaN by LP-MOVPE”, physica status solidi (c), vol. 4, pp. 2260–2263, 2007.
, “Highly Oriented Diamond Films Grown at High Growth Rate”, Diamond Electronics–Fundamentals to Applications(MRS Symposium Proceedings Volume 956), vol. 956, pp. 171–176, 2007.
, “Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE”, physica status solidi (c), vol. 4, pp. 2597–2600, 2007.
, “The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence”, Applied Physics Letters, vol. 91, p. 203115, 2007.
, “Papers from the 24th North American Conference on Molecular Beam Epitaxy-Oxides on Semiconductors-Epitaxial calcium oxide films deposited on gallium nitride surfaces”, Journal of Vacuum Science and Technology-Section B, vol. 25, pp. 1029–1032, 2007.
, “Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping”, Applied Physics Letters, vol. 91, p. 212103, 2007.
, “X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution”, Journal of electronic materials, vol. 36, pp. 414–419, 2007.
, “Comparative study of textured diamond films by thermal conductivity measurements”, Applied Physics A: Materials Science & Processing, vol. 85, pp. 331–335, 2006.
, “Current-voltage characteristics of n/n lateral polarity junctions in GaN”, Applied physics letters, vol. 89, pp. 052117–052117, 2006.
, “Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers”, Journal of crystal growth, vol. 287, pp. 586–590, 2006.
, “Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD”, Diamond and related materials, vol. 15, pp. 1784–1788, 2006.
, “MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy”, Applied physics letters, vol. 88, p. 212906, 2006.
, “Molecular beam epitaxy of SmO, DyO, and HoO on Si (111)”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, p. 2105, 2006.
, “Papers from the 33rd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Oxides and Complex Dielectrics-Molecular beam epitaxy of Sm2O3, Dy2O3, and Ho2O3 on Si (111)”, Journal of Vacuum Science and Technology-Section B, vol. 24, pp. 2105–2110, 2006.
, “Seeded growth of AlN on N-and Al-polar< span>< img height=”, Journal of crystal growth, vol. 286, pp. 205–208, 2006.
, “Crucible materials for growth of aluminum nitride crystals”, Journal of crystal growth, vol. 281, pp. 75–80, 2005.
, “Growth of large AlN single crystals along the [0001] direction”, MRS Proceedings, vol. 892, 2005.
, “Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy”, physica status solidi (c), vol. 2, pp. 2117–2120, 2005.
, “Polarity Control of LP-MOVPE GaN using N2 the Carrier Gas”, MRS Proceedings, vol. 892, 2005.
, “Growth of GaN from elemental Gallium and Ammonia via Modified Sandwich Growth Technique”, MRS Proceedings, vol. 831, 2004.
, “High Field Transport in AlN”, International Journal of High Speed Electronics and Systems, vol. 14, pp. 155–174, 2004.
, “Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport”, Surface science, vol. 560, pp. L202–L206, 2004.
, “Polarity control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates”, MRS Proceedings, vol. 831, 2004.
