Member Bibliography/Bibliografía de Miembros
Esta página presenta todas las publicaciones personales que los miembros de CienciaPR han subido a sus perfiles. También puedes ver todos los autores en esta colección de publicaciones o todas las palabras claves contenidas en la colección.
«Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics», Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
, «Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN», physica status solidi (b), 2012.
, , «Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates», physica status solidi (c), 2012.
, «Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport», Applied Physics Express, vol. 5, p. 125501, 2012.
, «Surfactant assisted growth of MgO films on GaN», Applied Physics Letters, vol. 101, pp. 092904–092904, 2012.
, «Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation», Advanced Materials, 2012.
, «Characterization of dislocation arrays in AlN single crystals grown by PVT», physica status solidi (a), 2011.
, «Fermi level effect on strain of Si-doped GaN», Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
, «Impact of gallium supersaturation on the growth of N-polar GaN», physica status solidi (c), 2011.
, «Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates», physica status solidi (c), 2011.
, «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». Google Patents, 2011.
, «Passivation of aluminum nitride substrates». Google Patents, 2011.
, , «Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications», physica status solidi (c), 2011.
, «Sharp bound and free exciton lines from homoepitaxial AlN», physica status solidi (a), 2011.
, «Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN», Applied Physics Letters, vol. 98, p. 082110, 2011.
, «On the strain in n-type GaN», Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
, «Strain in Si doped GaN and the Fermi level effect», Applied Physics Letters, vol. 98, p. 202101, 2011.
, «Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions», Nature Communications, vol. 2, p. 461, 2011.
, «Controlled polarity group III-nitride films and methods of preparing such films». Google Patents, 2010.
, «Controlled polarity group III-nitride films and methods of preparing such films». Google Patents, 2010.
, «Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux», Journal of Materials Research, vol. 25, pp. 670–679, 2010.
, «The effect of N-polar GaN domains as Ohmic contacts», Applied Physics Letters, vol. 97, p. 123502, 2010.
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