Member Bibliography/Bibliografía de Miembros

Esta página presenta todas las publicaciones personales que los miembros de CienciaPR han subido a sus perfiles. También puedes ver todos los autores en esta colección de publicaciones o todas las palabras claves contenidas en la colección.

Found 25 results
Autor Título Tipo [ Año(Asc)]
Filters: Autor is Dalmau, R.  [Clear All Filters]
2012
B. Raghothamachar, Dalmau, R., Moody, B., Craft, S., Schlesser, R., Xie, J. Q., Collazo, R., Dudley, M., y Sitar, Z., «Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics», Materials Science Forum, vol. 717, pp. 1287–1290, 2012.
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., y Sitar, Z., «Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN», physica status solidi (b), 2012.
R. Collazo, Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., y others, «On the origin of the 265 nm absorption band in AlN bulk crystals», Applied Physics Letters, vol. 100, p. 191914, 2012.
R. R. Collazo, Sitar, Z., y Dalmau, R., «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., y others, «265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization», in CLEO: Science and Innovations, 2011.
R. Dalmau, Moody, B., Xie, J., Collazo, R., y Sitar, Z., «Characterization of dislocation arrays in AlN single crystals grown by PVT», physica status solidi (a), 2011.
R. Dalmau, Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., y others, «Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates», Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., y Sitar, Z., «Impact of gallium supersaturation on the growth of N-polar GaN», physica status solidi (c), 2011.
J. Xie, Mia, S., Dalmau, R., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Ni/Au Schottky diodes on AlxGa1-xN (0.7< x< 1) grown on AlN single crystal substrates», physica status solidi (c), 2011.
R. R. Collazo, Sitar, Z., y Dalmau, R., «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». Google Patents, 2011.
R. R. Collazo, Sitar, Z., y Dalmau, R., «Passivation of aluminum nitride substrates». Google Patents, 2011.
R. R. Collazo, Sitar, Z., y Dalmau, R., «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications», physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., y Goldhahn, R., «Sharp bound and free exciton lines from homoepitaxial AlN», physica status solidi (a), 2011.
2010
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity», physica status solidi (a), vol. 207, pp. 45–48, 2010.
R. Collazo, Sitar, Z., Dalmau, R., y others, «PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES». 2010.
A. Rice, Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., y Sitar, Z., «Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition», Journal of Applied Physics, vol. 108, p. 043510, 2010.
J. Tweedie, Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., y Sitar, Z., «X-ray characterization of composition and relaxation of AlGaN (0≤ x≤ 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy», Journal of Applied Physics, vol. 108, p. 043526, 2010.
2008
R. Collazo, Mita, S., Rice, A., Dalmau, R., Wellenius, P., Muth, J., y Sitar, Z., «Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity», physica status solidi (c), vol. 5, pp. 1977–1979, 2008.
2007
S. Mita, Collazo, R., Dalmau, R., y Sitar, Z., «Growth of highly resistive Ga-polar GaN by LP-MOVPE», physica status solidi (c), vol. 4, pp. 2260–2263, 2007.
R. Collazo, Mita, S., Dalmau, R., y Sitar, Z., «Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE», physica status solidi (c), vol. 4, pp. 2597–2600, 2007.
R. Dalmau, Collazo, R., Mita, S., y Sitar, Z., «X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution», Journal of electronic materials, vol. 36, pp. 414–419, 2007.
2005
R. Schlesser, Dalmau, R., Zhuang, D., Collazo, R., y Sitar, Z., «Crucible materials for growth of aluminum nitride crystals», Journal of crystal growth, vol. 281, pp. 75–80, 2005.
2004
D. W. Brenner, Schlesser, R., Sitar, Z., Dalmau, R., Collazo, R., y Li, Y., «Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport», Surface science, vol. 560, pp. L202–L206, 2004.
1998
R. Collazo, Dalmau, R., y Martinez, A., «Hot Wall Epitaxy And Characterization Of Bismuth And Antimony Thin Films On Barium Fluoride Substrates», in APS March Meeting Abstracts, 1998, vol. 1, p. 3010.