Member Bibliography/Bibliografía de Miembros

Esta página presenta todas las publicaciones personales que los miembros de CienciaPR han subido a sus perfiles. También puedes ver todos los autores en esta colección de publicaciones o todas las palabras claves contenidas en la colección.

Found 43 results
Autor Título Tipo [ Año(Asc)]
Filters: Autor is Mita, S.  [Clear All Filters]
2012
B. Neuschl, Thonke, K., Feneberg, M., Mita, S., Xie, J., Dalmau, R., Collazo, R., y Sitar, Z., «Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN», physica status solidi (b), 2012.
J. Tweedie, Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., y Sitar, Z., «Schottky barrier and interface chemistry for Ni contacted to Al0. 8Ga0. 2N grown on c-oriented AlN single crystal substrates», physica status solidi (c), 2012.
E. A. Paisley, Shelton, T. C., Mita, S., Collazo, R., Christen, H. M., Sitar, Z., Biegalski, M. D., y Maria, J. P., «Surfactant assisted growth of MgO films on GaN», Applied Physics Letters, vol. 101, pp. 092904–092904, 2012.
2011
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., y others, «265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization», in CLEO: Science and Innovations, 2011.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «Fermi level effect on strain of Si-doped GaN», Proceedings of SPIE, vol. 7939, p. 79390B, 2011.
R. Dalmau, Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., y others, «Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates», Journal of the Electrochemical Society, vol. 158, p. H530, 2011.
S. Mita, Collazo, R., Rice, A., Tweedie, J., Xie, J., Dalmau, R., y Sitar, Z., «Impact of gallium supersaturation on the growth of N-polar GaN», physica status solidi (c), 2011.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications», physica status solidi (c), 2011.
M. Feneberg, Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J., Mita, S., y Goldhahn, R., «Sharp bound and free exciton lines from homoepitaxial AlN», physica status solidi (a), 2011.
J. Xie, Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., y Sitar, Z., «On the strain in n-type GaN», Applied Physics Letters, vol. 99, pp. 141916–141916, 2011.
J. Xie, Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., y Sitar, Z., «Strain in Si doped GaN and the Fermi level effect», Applied Physics Letters, vol. 98, p. 202101, 2011.
R. Kirste, Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Sebastian Reparaz, J., Mita, S., Xie, J., Rice, A., Tweedie, J., y others, «Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN», Journal of Applied Physics, vol. 110, pp. 093503–093503, 2011.
2010
M. D. Losego, Craft, H. S., Paisley, E. A., Mita, S., Collazo, R., Sitar, Z., y Maria, J. P., «Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux», Journal of Materials Research, vol. 25, pp. 670–679, 2010.
J. Xie, Mita, S., Collazo, R., Rice, A., Tweedie, J., y Sitar, Z., «The effect of N-polar GaN domains as Ohmic contacts», Applied Physics Letters, vol. 97, p. 123502, 2010.
R. Collazo, Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., y Sitar, Z., «Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity», physica status solidi (a), vol. 207, pp. 45–48, 2010.
A. Rice, Collazo, R., Tweedie, J., Xie, J., Mita, S., y Sitar, Z., «Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0<= x<= 1) deposition by LP OMVPE», Journal of Crystal Growth, vol. 312, pp. 1321–1324, 2010.
A. Rice, Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., y Sitar, Z., «Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition», Journal of Applied Physics, vol. 108, p. 043510, 2010.
J. Tweedie, Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., y Sitar, Z., «X-ray characterization of composition and relaxation of AlGaN (0≤ x≤ 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy», Journal of Applied Physics, vol. 108, p. 043526, 2010.
2009
M. D. Losego, Fitting Kourkoutis, L., Mita, S., Craft, H. S., Muller, D. A., Collazo, R., Sitar, Z., y Maria, J. P., «Epitaxial Ba0. 5Sr0. 5TiO3-GaN heterostructures with abrupt interfaces», Journal of Crystal Growth, vol. 311, pp. 1106–1109, 2009.
S. Mita, Collazo, R., y Sitar, Z., «Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition», Journal of Crystal Growth, vol. 311, pp. 3044–3048, 2009.
2008
F. Liu, Collazo, R., Mita, S., Sitar, Z., Pennycook, S. J., y Duscher, G., «Direct Observation of Inversion Domain Boundaries of GaN on c-Sapphire at Sub-{\aa}ngstrom Resolution», Advanced Materials, vol. 20, pp. 2162–2165, 2008.
M. D. Losego, Mita, S., Collazo, R., Sitar, Z., y Maria, J. P., «Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces», Journal of Crystal Growth, vol. 310, pp. 51–56, 2008.
F. Liu, Collazo, R., Mita, S., Duscher, G., y Pennycook, S. J., «Erratum:``The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence''[Appl. Phys. Lett. 91, 203115 (2007)]», Applied Physics Letters, vol. 92, p. 9901, 2008.
R. Collazo, Mita, S., Rice, A., Dalmau, R., Wellenius, P., Muth, J., y Sitar, Z., «Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity», physica status solidi (c), vol. 5, pp. 1977–1979, 2008.
S. Mita, Collazo, R., Rice, A., Dalmau, R. F., y Sitar, Z., «Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition», Journal of Applied Physics, vol. 104, p. 013521, 2008.

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