Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD
Enviado por Ramón Collazo el
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Título | Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD |
Publication Type | Journal Article |
Year of Publication | 2010 |
Autores | Buegler, M, Gamage, S, Atalay, R, Wang, J, Senevirathna, I, Kirste, R, Xu, T, Jamil, M, Ferguson, I, Tweedie, J, others, |
Journal | Proceedings of SPIE- The International Society for Optical Engineering |
Volume | 7784 |